Type Designator: SPW47N60C3
Marking Code: 47N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 415 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 47 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 252 nC
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 2200 pF
